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| MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM4450-35SL TECHNICAL DATA FEATURES LOW INTERMODULATION DISTORTION IM3=-45 dBc at Po= 35.0dBm, Single Carrier Level HIGH POWER P1dB=45.5dBm at 4.4GHz to 5.0GHz HIGH GAIN G1dB=9.5dB at 4.4GHz to 5.0GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS CHARACTERISTICS Output Power at 1dB Gain Compression Point Power Gain at 1dB Gain Compression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise SYMBOL P1dB G1dB IDS1 G ( Ta= 25C ) UNIT dBm dB A dB % MIN. 45.0 8.5 -42 TYP. MAX. 45.5 9.5 8.0 39 -45 8.0 9.0 0.8 9.0 100 CONDITIONS VDS=10V f = 4.4 to 5.0GHz add IM3 IDS2 Tch Two-Tone Test Po=35.0dBm (Single Carrier Level) (VDS X IDS + Pin - P1dB) X Rth(c-c) dBc A C Recommended Gate Resistance(Rg): 28 (Max.) ELECTRICAL CHARACTERISTICS CHARACTERISTICS Transconductance Pinch-off Voltage Saturated Drain Current Gate-Source Breakdown Voltage Thermal Resistance SYMBOL ( Ta= 25C ) UNIT mS V A V C/W MIN. -1.0 -5 TYP. 6500 -2.5 20 1.0 MAX. -4.0 1.3 CONDITIONS VDS= 3V IDS= 10.5A VDS= 3V IDS= 140mA VDS= 3V VGS= 0V IGS= -420A Channel to Case gm VGSoff IDSS VGSO Rth(c-c) The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may results from its use, No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. The information contained herein is subject to change without prior notice. It is therefor advisable to contact TOSHIBA before proceeding with design of equipment incorporating this product. Rev. Jan. 2007 TIM4450-35SL ABSOLUTE MAXIMUM RATINGS CHARACTERISTICS Drain-Source Voltage Gate-Source Voltage Drain Current Total Power Dissipation (Tc= 25 C) Channel Temperature Storage ( Ta= 25C ) SYMBOL VDS VGS IDS PT Tch Tstg UNIT V V A W C C RATING 15 -5 20 115.4 175 -65 to +175 PACKAGE OUTLINE (2-16G1B) Unit in mm (1) Gate (2) Source (3) Drain HANDLING PRECAUTIONS FOR PACKAGE MODEL Soldering iron should be grounded and the operating time should not exceed 10 seconds at 260C. 2 TIM4450-35SL RF PERFORMANCE Output Power vs. Frequency 47 46 VDS= 10 V IDS 8 A Pin= 36.0 dBm Po(dBm) 45 44 43 42 4.4 4.5 4.6 4.7 4.8 4.9 5.0 Frequency (GHz) Output Power vs. Input Power f=4.7 GHz VDS= 10 V IDS 8 A 48 90 46 70 Po(dBm) 44 50 42 add 30 40 30 32 34 36 38 40 10 Pin(dBm) 3 add(%) Po TIM4450-35SL Power Dissipation vs. Case Temperature 120 100 80 PT(W) 60 40 20 0 0 40 80 120 160 200 Tc(C) IM3 vs. Output Power Characteristics -10 VDS=10V IDS 8 A -20 freq.=4.7GHz f=5MHz -30 IM3(dBc) -40 -50 -60 30 32 34 36 38 40 Pout(dBm) @Single carrier level 4 |
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